| PART |
Description |
Maker |
| V53C1256162VALS10 V53C1256162VALS10E V53C1256162VA |
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16
256Mbit MOBILE SDRAM 2.5 VOLT FBGA PACKAGE 16M X 16
|
List of Unclassifed Manufacturers
List of Unclassifed Man...
|
| HY5S5B6GLF-6 HY5S5B6GLF-6E HY5S5B6GLF-H HY5S5B6GLF |
256Mbit (16Mx16bit) Mobile SDR Memory
|
Hynix Semiconductor
|
| K4J55323QF-GC20 K4J55323QF-GC K4J55323QF-GC14 K4J5 |
256Mbit GDDR3 SDRAM
|
SAMSUNG[Samsung semiconductor]
|
| K4S561632C-TC75 K4S561632C K4S561632C-L1H K4S56163 |
16M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
IC,SDRAM,4X4MX16,CMOS,TSOP,54PIN,PLASTIC
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM
|
Samsung semiconductor
|
| K4S561632D K4S561632D-TC_L75 K4S561632D-TC_L1H K4S |
256Mbit SDRAM 4M x 16bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| K4D553238F-GC33 K4D553238F-GC36 K4D553238F-GC2A K4 |
256Mbit GDDR SDRAM 56Mbit GDDR SDRAM内存
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K4S560832C K4S560832C-TC_L1H K4S560832C-TC_L1L K4S |
32M X 8 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
256Mbit SDRAM 8M x 8bit x 4 Banks Synchronous DRAM LVTTL
|
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| KBE00S003M-D411 KBE00S003M |
1Gb NAND*2 256Mb Mobile SDRAM*2
From old datasheet system
1Gb NANDx2 256Mb Mobile SDRAMx2
|
SAMSUNG[Samsung semiconductor]
|
| K4M51323LC-F |
Mobile-SDRAM
|
Samsung semiconductor
|
| MT48H8M32LFB5-10 MT48H8M32LFF5-10 MT48H8M32LFF5-8 |
MOBILE SDRAM
|
Micron Technology
|
